关键参数
| Data Retention - TDR (Year) | 100 years |
|---|---|
| Operating Temperature | -40℃~+85℃ |
| Clock Frequency | 1MHz |
| Write Cycle Endurance | 1,000,000 cycles |
| Access Time | 3.5us |
| Standby Current | 5uA |
| Memory Size | 256Kbit |
| Voltage - Supply | 1.8V~5.5V |
| Features | Hardware write protection function、Noise suppression function、Built-in power-on |
| Write Cycle Time(Tw) | 5ms |
替代与关注项
暂无可比替代条目。器件替代涉及封装、参数与批次一致性，不做自动推荐；可到替代料匹配工具按参数做进一步比对。
