关键参数
| Data Retention - TDR (Year) | 100 years |
|---|---|
| Operating Temperature | -40℃~+85℃ |
| Clock Frequency | 1MHz |
| Write Cycle Endurance | 1,000,000 cycles |
| Access Time | 550ns、900ns |
| Standby Current | 6uA |
| Memory Size | 64Kbit |
| Voltage - Supply | 1.7V~5.5V |
| Features | Hardware write protection function、Noise suppression function、Page write protect |
| Write Cycle Time(Tw) | 5ms |
替代与关注项
暂无可比替代条目。器件替代涉及封装、参数与批次一致性,不做自动推荐;可到替代料匹配工具按参数做进一步比对。

